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SSD M.2 4TB SAMSUNG 990 PRO NVMe PCIe Gen4 MZ-V9P4T0BW

  • Производител: SAMSUNG
  • Гаранција: 720 дена

Original price was: 21,999.00 ден.Current price is: 18,999.00 ден.

ОПИС

Model name: SAMSUNG 990 PRO
Specification
Rated Capacity: 4,000GB (1GB=1 Billion byte by IDEMA) * Actual usable capacity may be less (due to formatting, partitioning, operating system, applications or otherwise)
Form Factor: M.2 (2280)
Interface: PCIe Gen 4.0 x4, NVMe 2.0
Storage Memory: Samsung V-NAND TLC
Controller: Samsung in-house Controller
Cache Memory: Samsung 4GB Low Power DDR4 SDRAM
TRIM Support: Supported
S.M.A.R.T Support: Supported
GC (Garbage Collection): Auto Garbage Collection Algorithm
Encryption Support: AES 256-bit Encryption (Class 0) TCG/Opal IEEE1667 (Encrypted drive)
WWN Support: Not supported
Device Sleep Mode Support: Yes
Sequential Read: Up to 7,450 MB/s * Performance may vary based on system hardware & configuration
Sequential Write: Up to 6,900 MB/s * Performance may vary based on system hardware & configuration
Random Read (4KB, QD32): Up to 1,600,000 IOPS * Performance may vary based on system hardware & configuration
Random Write (4KB, QD32): Up to 1,550,000 IOPS * Performance may vary based on system hardware & configuration
Random Read (4KB, QD1): Up to 22,000 IOPS * Performance may vary based on system hardware & configuration
Random Write (4KB, QD1): Up to 80,000 IOPS * Performance may vary based on system hardware & configuration
Average Power Consumption (system level): *Average: 6.5 W *Maximum: 8.6 W (Burst mode) * Actual power consumption may vary depending on system hardware & configuration
Power consumption (Idle): Max. 55 mW * Actual power consumption may vary depending on system hardware & configuration
Allowable Voltage: 3.3 V ± 5 % Allowable voltage
Reliability (MTBF): 1.5 Million Hours Reliability (MTBF)
Operating Temperature: 0 – 70 ℃
Shock: 1,500 G & 0.5 ms (Half sine)

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    ОПИС

    Model name: SAMSUNG 990 PRO
    Specification
    Rated Capacity: 4,000GB (1GB=1 Billion byte by IDEMA) * Actual usable capacity may be less (due to formatting, partitioning, operating system, applications or otherwise)
    Form Factor: M.2 (2280)
    Interface: PCIe Gen 4.0 x4, NVMe 2.0
    Storage Memory: Samsung V-NAND TLC
    Controller: Samsung in-house Controller
    Cache Memory: Samsung 4GB Low Power DDR4 SDRAM
    TRIM Support: Supported
    S.M.A.R.T Support: Supported
    GC (Garbage Collection): Auto Garbage Collection Algorithm
    Encryption Support: AES 256-bit Encryption (Class 0) TCG/Opal IEEE1667 (Encrypted drive)
    WWN Support: Not supported
    Device Sleep Mode Support: Yes
    Sequential Read: Up to 7,450 MB/s * Performance may vary based on system hardware & configuration
    Sequential Write: Up to 6,900 MB/s * Performance may vary based on system hardware & configuration
    Random Read (4KB, QD32): Up to 1,600,000 IOPS * Performance may vary based on system hardware & configuration
    Random Write (4KB, QD32): Up to 1,550,000 IOPS * Performance may vary based on system hardware & configuration
    Random Read (4KB, QD1): Up to 22,000 IOPS * Performance may vary based on system hardware & configuration
    Random Write (4KB, QD1): Up to 80,000 IOPS * Performance may vary based on system hardware & configuration
    Average Power Consumption (system level): *Average: 6.5 W *Maximum: 8.6 W (Burst mode) * Actual power consumption may vary depending on system hardware & configuration
    Power consumption (Idle): Max. 55 mW * Actual power consumption may vary depending on system hardware & configuration
    Allowable Voltage: 3.3 V ± 5 % Allowable voltage
    Reliability (MTBF): 1.5 Million Hours Reliability (MTBF)
    Operating Temperature: 0 – 70 ℃
    Shock: 1,500 G & 0.5 ms (Half sine)

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