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hard disk ssd 1tb samsung 990 evo plus nvme pcie gen5

SSD M.2 1TB SAMSUNG 990 EVO PLUS NVMe PCIe Gen5 7.150/6.300MB/s MZ-V9S1T0BW

Производител: SAMSUNG
Гаранција: 720 дена

Original price was: 6,999.00 ден.Current price is: 6,099.00 ден.

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ОПИС

Model name: SAMSUNG 990 EVO PLUS
Specification :
Form Factor M.2 (2280)
Interface PCIe® 4.0 x4 / 5.0 x2 NVMe™ 2.0
Storage Memory Samsung V-NAND TLC
Controller Samsung in-house Controller
Cache Memory HMB (Host Memory Buffer)
RIM Support Supported
S.M.A.R.T Support Supported
GC (Garbage Collection) Auto Garbage Collection Algorithm
Encryption Support AES 256-bit Encryption (Class 0) TCG/Opal IEEE1667 (Encrypted drive)
WWN Support Not supported
Device Sleep Mode Support Yes
Sequential Read Up to 7,150MB/s*
Sequential Write Up to 6,300MB/s*
Random Read (4KB, QD32) Up to 850,000 IOPS* Performance may vary based on system hardware & configuration
Random Write (4KB, QD32) Up to 1,350,000 IOPS* Performance may vary based on system hardware & configuration
Average Power Consumption (system level) Average: Read 4.3 W / Write 4.2 W* Actual power consumption may vary depending on system hardware & configuration
Power consumption (Idle) Typical 60 mW* Actual power consumption may vary depending on system hardware & configuration
Power Consumption (Device Sleep) Typical 5 mW* Actual power consumption may vary depending on system hardware & configuration
Allowable Voltage 3.3 V ± 5 % Allowable voltage
Reliability (MTBF) 1.5 Million Hours Reliability (MTBF)
Operating Temperature 0 – 70 ℃ Operating Temperature
Shock 1,500 G & 0.5 ms (Half sine)

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ОПИС
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ОПИС

Model name: SAMSUNG 990 EVO PLUS
Specification :
Form Factor M.2 (2280)
Interface PCIe® 4.0 x4 / 5.0 x2 NVMe™ 2.0
Storage Memory Samsung V-NAND TLC
Controller Samsung in-house Controller
Cache Memory HMB (Host Memory Buffer)
RIM Support Supported
S.M.A.R.T Support Supported
GC (Garbage Collection) Auto Garbage Collection Algorithm
Encryption Support AES 256-bit Encryption (Class 0) TCG/Opal IEEE1667 (Encrypted drive)
WWN Support Not supported
Device Sleep Mode Support Yes
Sequential Read Up to 7,150MB/s*
Sequential Write Up to 6,300MB/s*
Random Read (4KB, QD32) Up to 850,000 IOPS* Performance may vary based on system hardware & configuration
Random Write (4KB, QD32) Up to 1,350,000 IOPS* Performance may vary based on system hardware & configuration
Average Power Consumption (system level) Average: Read 4.3 W / Write 4.2 W* Actual power consumption may vary depending on system hardware & configuration
Power consumption (Idle) Typical 60 mW* Actual power consumption may vary depending on system hardware & configuration
Power Consumption (Device Sleep) Typical 5 mW* Actual power consumption may vary depending on system hardware & configuration
Allowable Voltage 3.3 V ± 5 % Allowable voltage
Reliability (MTBF) 1.5 Million Hours Reliability (MTBF)
Operating Temperature 0 – 70 ℃ Operating Temperature
Shock 1,500 G & 0.5 ms (Half sine)